Press information on the Intersolar 2010
Recrystallisation of amorphous silicon layers significantly simplified
Hamburg, 18 May, 2010: Each year, the Year of Science is announced by the Federal Ministry of Education and Research in order to specifically promote one field of science. The year 2010 is dedicated to energy across all disciplines. Even the Federal Government is devoting itself to the promotion of renewable energies. With the help of a new and innovative technology for the recrystallisation of amorphous silicon layers, IPB AG is also making a contribution towards modern climate protection and helping to take a revolutionary step forward in the area of silicon thin-film photovoltaics. Thanks to this patented process, it is possible to shorten the recrystallisation times for μc-Si thin-film solar cell production down to a few minutes. IPB AG will present the new development results for the first time at the Intersolar 2010 in Munich from June 9 to 11 in Hall C3, Stand 270.
A standard process in the production of micro-crystalline silicon thin-films for photovoltaics consists of an amorphous deposition with subsequent recrystallisation, which is still designed in most production lines as furnace anneal with several hours process time and involving batch operation. It is an expensive and energy-hungry process that severely hampers production flow. With the help of a new technology from the Walter Schottky Institute, IPB AG shortens the process time by several orders of magnitude.
The innovation is based on the concept of AL-induced layer exchange (ALILE) and is currently being developed to make it industry-ready. With the innovative Ti-MILE technology (Titaniumassisted Metal-Induced Layer Exchange Technology,) an additional intermediate layer of titanium oxide is integrated into the process. The titanium oxide controls a layer exchange between a sacrificial metal layer and the amorphous silicon, which converts the silicon into a micro-crystalline layer with an adjustable crystallite size in just a few minutes. In comparison to the ALILE process the titanium oxide intermediate layer, in contrast to the ALILE concept, increases the activation energy for the formation of new crystallites and, as a result of this, leads to considerably larger crystallites at comparable temperatures. The Ti-MILE process takes place at glass-substrate compatible temperatures and permits a cost-effective, continuously running process flowl. The solar cell functionality of such layers has already been demonstrated based on simplified test structures. The latest findings of the patent-protected technology will be presented to the professional public for the first time from June 9-11, 2010 in Munich at the Intersolar, which is the world’s largest trade fair for the solar industry.
The technology for the recrystallisation of amorphous silicon layer, one of 22 patent portfolios from a technology development fund that was created by a major German bank and an independent initiator, is owned by ‘Dritte Patentportfolio Beteiligungsgesellschaft mbH & Co. KG’. IP Bewertungs AG (IPB) advises the technology development fund in the selection of sustainable patent-based technologies and supports it in further development and licensing.
About IP Bewertungs AG (IPB)
IPB AG is a leading company in the field of assessment, development, and application of patent-based technologies. With a managed asset volume of over 200 million euros, IPB AG is the market leader in the field of technology development funds. With more than 80 employees and over 250 external partners from research institutes and universities, IPB AG plays an integral part in a strong technology and research network. Long-term partnerships with leading legal practices and numerous partners from the manufacturing industry guarantee our competence. www.IPB-AG.com